050-7033 rev c 9-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com t-max ? g d s to-264 b2fll lfll apt50m75b2fll apt50m75lfll 500v 57a 0.075 ?? ?? ? power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular t-max? or to-264 package fast recovery body diode power mos 7 r fredfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 28.5a) zero gate voltage drain current (v ds = 500v, v gs = 0v) zero gate voltage drain current (v ds = 400v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 500 0.075 250 1000 100 35 apt50m75b2fll_lfll 500 57 228 3040 570 4.56 -55 to 150 300 5750 2500 downloaded from: http:///
050-7033 rev c 9-2004 dynamic characteristics apt50m75b2fll_lfll z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.25 0.2 0.15 0.1 0.05 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -57a) peak diode recovery dv / dt 5 reverse recovery time(i s = -57a, di / dt = 100a/s) reverse recovery charge(i s = -57a, di / dt = 100a/s) peak recovery current(i s = -57a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 57 228 1.3 15 t j = 25c 280 t j = 125c 600 t j = 25c 1.9 t j = 125c 5.7 t j = 25c 15 t j = 125c 23 symbol r jc r ja min typ max 0.22 40 unitc/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 1.54mh, r g = 25 ? , peak i l = 57a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 57a di / dt 700a/s v r v dss t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 300v i d = 57a @ 25c resistive switching v gs = 15v v dd = 300v i d = 57a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 333v, v gs = 15v i d = 57a, r g = 5 ? inductive switching @ 125c v dd = 333v v gs = 15v i d = 57a, r g = 5 ? min typ max 55901180 85 125 3365 8 1921 3 755725 1240 845 unit pf nc ns j downloaded from: http:///
050-7033 rev c 9-2004 typical performance curves apt50m75b2fll_lfll v gs =10v v gs =20v 15 &10v 7.5v 6v 5.5v 6.5v 7v t j = +125c t j = +25c t j = -55c 0 5 10 15 20 25 30 012 345678910 0 20 40 60 80 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 120100 8060 40 20 0 1.2 1.151.10 1.05 1.00 0.95 0.90 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 160140 120 100 8060 40 20 0 6050 40 30 20 10 0 2.52.0 1.5 1.0 0.5 0.0 8v normalized to v gs = 10v @ i d = 28.5a i d = 28.5a v gs = 10v v ds > i d (on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle 0.01440.0763 0.130 0.00575f0.0186f 0.278f power (watts) junctiontemp. ( c) rc model case temperature. ( c) v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds(on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, r ds(on) vs. temperature figure 9, threshold voltage vs temperature r ds(on) , drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs(th) , threshold voltage bv dss , drain-to-source breakdown r ds(on) , drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) downloaded from: http:///
apt50m75b2fll_lfll 050-7033 rev c 9-2004 1 10 100 500 0 10 20 30 40 50 0 40 80 120 160 200 0.3 0.6 0.9 1.2 1.5 228100 10 1 1612 84 0 20,00010,000 1,000 100 10 200100 10 1 c rss c oss c iss t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms v ds =250v v ds =100v v ds =400v i d = 57a 1ms 100s t j =+150c t j =+25c 100 9080 70 60 50 40 30 20 10 1 25002000 1500 1000 500 0 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 35 40 45 50 120110 100 9080 70 60 50 40 30 20 10 35003000 2500 2000 1500 1000 500 0 i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 333v r g = 5 ? t j = 125c l = 100h v dd = 333v i d = 57a t j = 125c l = 100h e on includes diode reverse recovery t d(on) t d(off) e on e off e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 333v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery v dd = 333v r g = 5 ? t j = 125c l = 100h v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11,capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage f igure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) downloaded from: http:///
050-7033 rev c 9-2004 apt50m75b2fll_lfll 5 % 5 % t r t d(on) gate voltage drain voltage 10 % drain current 10% 90% t j = 125 c switching energy 0 t f t d(off) gate voltage drain voltage 90 % drain current 10% 90% t j = 125 c switching energy figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt60df60 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. downloaded from: http:///
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